esea_info
/
MyStm32Code
1
0
Fork 0
Code Issues Pull Requests Packages Projects Releases Wiki Activity
不含stm32 底层的代码
You can not select more than 25 topics Topics must start with a letter or number, can include dashes ('-') and can be up to 35 characters long.
2 Commits
2 Branches
0 Tags
3.2 MiB
Tag: Branch: Tree: 17be148c1c
Branches Tags
${ item.name }
Create tag ${ searchTerm }
Create branch ${ searchTerm }
from '17be148c1c'
${ noResults }
MyStm32Code/bsp/Src/bsp_nand.c

723 lines
30 KiB
Raw Normal View History Unescape

commit
2 years ago
#include "bsp_nand.h"
#include "stm32f4xx.h"
#include "stm32f4xx_hal_nand.h"
extern NAND_HandleTypeDef hnand2;
NAND_HandleTypeDef *NAND_Handler = &hnand2; //NAND FLASH句柄
static void HAL_NAND_MspInit_Control_IO(NAND_HandleTypeDef *hnand);
nand_attriute my_nand = {
NAND_Init,
0,0,0,0,0,0,0,0,
0xFFFFFFFF, //id
NULL, // Lut
0,
NULL,
NULL,
}; //nand重要参数结构体
/**
* @brief 延迟一段时间
* @param 延迟的时间长度
* @retval None
*/
static void NAND_Delay(__IO uint32_t nCount)
{
__IO uint32_t index = 0;
for(index = ( nCount); index != 0; index--)
{
}
}
//初始化NAND FLASH
uint8_t NAND_Init(void)
{
FMC_NAND_PCC_TimingTypeDef ComSpaceTiming ;
FMC_NAND_PCC_TimingTypeDef AttSpaceTiming;
// NAND_MPU_Config();
NAND_Handler->Instance=FMC_Bank2_3;
NAND_Handler->Init.NandBank=FMC_NAND_BANK3; //NAND挂在BANK3上
NAND_Handler->Init.Waitfeature=FMC_NAND_PCC_WAIT_FEATURE_DISABLE; //关闭等待特性
NAND_Handler->Init.MemoryDataWidth=FMC_NAND_PCC_MEM_BUS_WIDTH_8; //8位数据宽度
NAND_Handler->Init.EccComputation=FMC_NAND_ECC_DISABLE; //禁止ECC
NAND_Handler->Init.ECCPageSize=FMC_NAND_ECC_PAGE_SIZE_512BYTE; //ECC页大小为512字节
NAND_Handler->Init.TCLRSetupTime=8; //设置TCLR(tCLR=CLE到RE的延时)=(TCLR+TSET+2)*THCLK,THCLK=1/180M=5.5ns
NAND_Handler->Init.TARSetupTime=8; //设置TAR(tAR=ALE到RE的延时)=(TAR+TSET+2)*THCLK,THCLK=1/180M=5.5ns
ComSpaceTiming.SetupTime=8; //建立时间
ComSpaceTiming.WaitSetupTime=8; //等待时间
ComSpaceTiming.HoldSetupTime=8; //保持时间
ComSpaceTiming.HiZSetupTime=8; //高阻态时间
AttSpaceTiming.SetupTime=8; //建立时间
AttSpaceTiming.WaitSetupTime=8; //等待时间
AttSpaceTiming.HoldSetupTime=8; //保持时间
AttSpaceTiming.HiZSetupTime=8; //高阻态时间
// TODO: add Nand Control IO
HAL_NAND_MspInit_Control_IO(NAND_Handler );
HAL_NAND_Init(NAND_Handler,&ComSpaceTiming,&AttSpaceTiming);
NAND_Reset(); //复位NAND
NAND_Delay(100);
my_nand.id=NAND_ReadID(); //读取ID
// printf("NAND ID:%#x\r\n",my_nand.id); // 前面log_i 出来
NAND_ModeSet(4); //设置为MODE4,高速模式
if(my_nand.id==MT29F16G08ABABA) //NAND为MT29F16G08ABABA
{
my_nand.page_totalsize=4320;
my_nand.page_mainsize=4096;
my_nand.page_sparesize=224;
my_nand.block_pagenum=128;
my_nand.plane_blocknum=2048;
my_nand.block_totalnum=4096;
}
else if(my_nand.id==W29N01GVSIAA)//NAND为W29N01GVSIAA
{
my_nand.page_totalsize=2112;
my_nand.page_mainsize=2048;
my_nand.page_sparesize=64;
my_nand.block_pagenum=64;
my_nand.plane_blocknum=1024;
my_nand.block_totalnum=2048;
}else if (my_nand.id==W29N01HVSINA)
{
my_nand.page_totalsize=2112;
my_nand.page_mainsize=2048;
my_nand.page_sparesize=64;
my_nand.block_pagenum=64;
my_nand.plane_blocknum=1024;
my_nand.block_totalnum=1024;
}
else return 1; //错误，返回
return 0;
}
// NAND FALSH底层驱动,引脚配置，时钟使能
// 此函数会被HAL_NAND_Init()调用
// IO : PB13 R/B, PG9 CE, PD4 PD5 PD11 PD12
static void HAL_NAND_MspInit_Control_IO(NAND_HandleTypeDef *hnand)
{
GPIO_InitTypeDef GPIO_Initure;
__HAL_RCC_FMC_CLK_ENABLE(); //使能FMC时钟
__HAL_RCC_GPIOB_CLK_ENABLE(); //使能GPIOB时钟
__HAL_RCC_GPIOD_CLK_ENABLE(); //使能GPIOD时钟
// __HAL_RCC_GPIOE_CLK_ENABLE(); //使能GPIOE时钟
__HAL_RCC_GPIOG_CLK_ENABLE(); //使能GPIOG时钟
//初始化PB13 R/B引脚
GPIO_Initure.Pin=GPIO_PIN_13;
GPIO_Initure.Mode=GPIO_MODE_INPUT; //输入
GPIO_Initure.Pull=GPIO_PULLUP; //上拉
GPIO_Initure.Speed=GPIO_SPEED_FREQ_VERY_HIGH; //高速
HAL_GPIO_Init(GPIOB,&GPIO_Initure);
//初始化PG9 NCE3引脚
GPIO_Initure.Pin=GPIO_PIN_9;
GPIO_Initure.Mode=GPIO_MODE_AF_PP; //输入
GPIO_Initure.Pull=GPIO_NOPULL; //上拉
GPIO_Initure.Speed=GPIO_SPEED_FREQ_VERY_HIGH; //高速
GPIO_Initure.Alternate=GPIO_AF12_FMC; //复用为FMC
HAL_GPIO_Init(GPIOG,&GPIO_Initure);
GPIO_Initure.Pin= GPIO_PIN_4|GPIO_PIN_5|GPIO_PIN_11|GPIO_PIN_12;
GPIO_Initure.Pull=GPIO_NOPULL;
HAL_GPIO_Init(GPIOD,&GPIO_Initure);
//初始化PD0,1,4,5,11,12,14,15
// GPIO_Initure.Pin=GPIO_PIN_0|GPIO_PIN_1|GPIO_PIN_4|GPIO_PIN_5|\
// GPIO_PIN_11|GPIO_PIN_12|GPIO_PIN_14|GPIO_PIN_15;
// GPIO_Initure.Pull=GPIO_NOPULL;
// HAL_GPIO_Init(GPIOD,&GPIO_Initure);
// //初始化PE7,8,9,10
// GPIO_Initure.Pin=GPIO_PIN_7|GPIO_PIN_8|GPIO_PIN_9|GPIO_PIN_10;
// HAL_GPIO_Init(GPIOE,&GPIO_Initure);
}
//配置MPU的region
void NAND_MPU_Config(void)
{
MPU_Region_InitTypeDef MPU_Initure;
HAL_MPU_Disable(); //配置MPU之前先关闭MPU,配置完成以后在使能MPU
//配置RAM为region1，大小为256MB，此区域可读写
MPU_Initure.Enable=MPU_REGION_ENABLE; //使能region
MPU_Initure.Number=NAND_REGION_NUMBER; //设置region，NAND使用的region0
MPU_Initure.BaseAddress=NAND_ADDRESS_START; //region基地址
MPU_Initure.Size=NAND_REGION_SIZE; //region大小
MPU_Initure.SubRegionDisable=0X00;
MPU_Initure.TypeExtField=MPU_TEX_LEVEL0;
MPU_Initure.AccessPermission=MPU_REGION_FULL_ACCESS; //此region可读写
MPU_Initure.DisableExec=MPU_INSTRUCTION_ACCESS_ENABLE; //允许读取此区域中的指令
MPU_Initure.IsShareable=MPU_ACCESS_NOT_SHAREABLE;
MPU_Initure.IsCacheable=MPU_ACCESS_NOT_CACHEABLE;
MPU_Initure.IsBufferable=MPU_ACCESS_BUFFERABLE;
HAL_MPU_ConfigRegion(&MPU_Initure);
HAL_MPU_Enable(MPU_PRIVILEGED_DEFAULT); //开启MPU
}
//读取NAND FLASH的ID
//返回值:0,成功;
// 其他,失败
uint8_t NAND_ModeSet(uint8_t mode)
{
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_FEATURE;//发送设置特性命令
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=0X01; //地址为0X01,设置mode
*(__IO uint8_t*)NAND_ADDRESS=mode; //P1参数,设置mode
*(__IO uint8_t*)NAND_ADDRESS=0;
*(__IO uint8_t*)NAND_ADDRESS=0;
*(__IO uint8_t*)NAND_ADDRESS=0;
if(NAND_WaitForReady()==NSTA_READY)return 0;//成功
else return 1; //失败
}
//读取NAND FLASH的ID
//不同的NAND略有不同，请根据自己所使用的NAND FALSH数据手册来编写函数
//返回值:NAND FLASH的ID值
uint32_t NAND_ReadID(void)
{
uint8_t deviceid[5];
uint32_t id;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_READID; //发送读取ID命令
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=0X00;
//ID一共有5个字节
deviceid[0]=*(__IO uint8_t*)NAND_ADDRESS;
deviceid[1]=*(__IO uint8_t*)NAND_ADDRESS;
deviceid[2]=*(__IO uint8_t*)NAND_ADDRESS;
deviceid[3]=*(__IO uint8_t*)NAND_ADDRESS;
deviceid[4]=*(__IO uint8_t*)NAND_ADDRESS;
//镁光的NAND FLASH的ID一共5个字节，但是为了方便我们只取4个字节组成一个32位的ID值
//根据NAND FLASH的数据手册，只要是镁光的NAND FLASH，那么一个字节ID的第一个字节都是0X2C
//所以我们就可以抛弃这个0X2C，只取后面四字节的ID值。
id=((uint32_t)deviceid[1])<<24|((uint32_t)deviceid[2])<<16|((uint32_t)deviceid[3])<<8|deviceid[4];
return id;
}
//读NAND状态
//返回值:NAND状态值
//bit0:0,成功;1,错误(编程/擦除/READ)
//bit6:0,Busy;1,Ready
uint8_t NAND_ReadStatus(void)
{
__IO uint8_t data=0;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_READSTA;//发送读状态命令
data++;data++;data++;data++;data++; //加延时,防止-O2优化,导致的错误.
data=*(__IO uint8_t*)NAND_ADDRESS; //读取状态值
return data;
}
//等待NAND准备好
//返回值:NSTA_TIMEOUT 等待超时了
// NSTA_READY 已经准备好
uint8_t NAND_WaitForReady(void)
{
uint8_t status=0;
__IO uint32_t time=0;
while(1) //等待ready
{
status=NAND_ReadStatus(); //获取状态值
if(status&NSTA_READY)
{
if (status&0x1)
{
// printf("校验不通过\n");
}
else
{
// printf("校验通过");
}
break;
}
time++;
if(time>=0X1FFFF)return NSTA_TIMEOUT;//超时
}
return NSTA_READY;//准备好
}
//复位NAND
//返回值:0,成功;
// 其他,失败
uint8_t NAND_Reset(void)
{
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_RESET; //复位NAND
if(NAND_WaitForReady()==NSTA_READY)return 0;//复位成功
else return 1; //复位失败
}
//等待RB信号为某个电平
//rb:0,等待RB==0
// 1,等待RB==1
//返回值:0,成功
// 1,超时
uint8_t NAND_WaitRB(__IO uint8_t rb)
{
__IO uint16_t time=0;
while(time<80000)
{
time++;
if(NAND_RB==rb)return 0;
}
return 1;
}
//读取NAND Flash的指定页指定列的数据(main区和spare区都可以使用此函数)
//PageNum:要读取的页地址,范围:0~(block_pagenum*block_totalnum-1)
//ColNum:要读取的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
//*pBuffer:指向数据存储区
//NumByteToRead:读取字节数(不能跨页读)
//返回值:0,成功
// 其他,错误代码
uint8_t NAND_ReadPage(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToRead)
{
__IO uint16_t i=0;
uint8_t res=0;
uint8_t eccnum=0; //需要计算的ECC个数，每NAND_ECC_SECTOR_SIZE字节计算一个ecc
uint8_t eccstart=0; //第一个ECC值所属的地址范围
uint8_t errsta=0;
uint8_t *p;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_A;
//发送地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)ColNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(ColNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)PageNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>16);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_TRUE1;
//下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
//将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
//就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
//闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
//代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
res=NAND_WaitRB(0); //等待RB=0
if(res)return NSTA_TIMEOUT; //超时退出
//下面2行代码是真正判断NAND是否准备好的
res=NAND_WaitRB(1); //等待RB=1
if(res)return NSTA_TIMEOUT; //超时退出
if(NumByteToRead%NAND_ECC_SECTOR_SIZE)//不是NAND_ECC_SECTOR_SIZE的整数倍，不进行ECC校验
{
//读取NAND FLASH中的值
for(i=0;i<NumByteToRead;i++)
{
*(__IO uint8_t*)pBuffer++ = *(__IO uint8_t*)NAND_ADDRESS;
}
}else
{
eccnum=NumByteToRead/NAND_ECC_SECTOR_SIZE; //得到ecc计算次数
eccstart=ColNum/NAND_ECC_SECTOR_SIZE;
p=pBuffer;
for(res=0;res<eccnum;res++)
{
FMC_Bank2_3->PCR3|=1<<6; //使能ECC校验
for(i=0;i<NAND_ECC_SECTOR_SIZE;i++) //读取NAND_ECC_SECTOR_SIZE个数据
{
*(__IO uint8_t*)pBuffer++ = *(__IO uint8_t*)NAND_ADDRESS;
}
while(!(FMC_Bank2_3->SR3&(1<<6))); //等待FIFO空
my_nand.ecc_hdbuf[res+eccstart]=FMC_Bank2_3->ECCR3;//读取硬件计算后的ECC值
FMC_Bank2_3->PCR3&=~(1<<6); //禁止ECC校验
}
i=my_nand.page_mainsize+0X10+eccstart*4; //从spare区的0X10位置开始读取之前存储的ecc值
NAND_Delay(30);//等待tADL
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=0X05; //随机读指令
//发送地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)i;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(i>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=0XE0; //开始读数据
NAND_Delay(30);//等待tADL
pBuffer=(uint8_t*)&my_nand.ecc_rdbuf[eccstart];
for(i=0;i<4*eccnum;i++) //读取保存的ECC值
{
*(__IO uint8_t*)pBuffer++= *(__IO uint8_t*)NAND_ADDRESS;
}
for(i=0;i<eccnum;i++) //检验ECC
{
if(my_nand.ecc_rdbuf[i+eccstart]!=my_nand.ecc_hdbuf[i+eccstart])//不相等,需要校正
{
// log_i("err hd,rd:0x%x,0x%x\r\n",my_nand.ecc_hdbuf[i+eccstart],my_nand.ecc_rdbuf[i+eccstart]);
// log_i("eccnum,eccstart:%d,%d\r\n",eccnum,eccstart);
// log_i("PageNum,ColNum:%d,%d\r\n",PageNum,ColNum);
res=NAND_ECC_Correction(p+NAND_ECC_SECTOR_SIZE*i,my_nand.ecc_rdbuf[i+eccstart],my_nand.ecc_hdbuf[i+eccstart]);//ECC校验
if(res)errsta=NSTA_ECC2BITERR; //标记2BIT及以上ECC错误
else errsta=NSTA_ECC1BITERR; //标记1BIT ECC错误
}
}
}
if(NAND_WaitForReady()!=NSTA_READY)errsta=NSTA_ERROR; //失败
return errsta; //成功
}
//读取NAND Flash的指定页指定列的数据(main区和spare区都可以使用此函数),并对比(FTL管理时需要)
//PageNum:要读取的页地址,范围:0~(block_pagenum*block_totalnum-1)
//ColNum:要读取的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
//CmpVal:要对比的值,以uint32_t为单位
//NumByteToRead:读取字数(以4字节为单位,不能跨页读)
//NumByteEqual:从初始位置持续与CmpVal值相同的数据个数
//返回值:0,成功
// 其他,错误代码
uint8_t NAND_ReadPageComp(uint32_t PageNum,uint16_t ColNum,uint32_t CmpVal,uint16_t NumByteToRead,uint16_t *NumByteEqual)
{
uint16_t i=0;
uint8_t res=0;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_A;
//发送地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)ColNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(ColNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)PageNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>16);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_AREA_TRUE1;
//下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
//将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
//就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
//闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
//代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
res=NAND_WaitRB(0); //等待RB=0
if(res)return NSTA_TIMEOUT; //超时退出
//下面2行代码是真正判断NAND是否准备好的
res=NAND_WaitRB(1); //等待RB=1
if(res)return NSTA_TIMEOUT; //超时退出
for(i=0;i<NumByteToRead;i++)//读取数据,每次读4字节
{
if(*(__IO uint32_t*)NAND_ADDRESS!=CmpVal)break; //如果有任何一个值,与CmpVal不相等,则退出.
}
*NumByteEqual=i; //与CmpVal值相同的个数
if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;//失败
return 0; //成功
}
//在NAND一页中写入指定个字节的数据(main区和spare区都可以使用此函数)
//PageNum:要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
//ColNum:要写入的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
//pBbuffer:指向数据存储区
//NumByteToWrite:要写入的字节数，该值不能超过该页剩余字节数！！！
//返回值:0,成功
// 其他,错误代码
uint8_t NAND_WritePage(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToWrite)
{
__IO uint16_t i=0;
uint8_t res=0;
uint8_t eccnum=0; //需要计算的ECC个数，每NAND_ECC_SECTOR_SIZE字节计算一个ecc
uint8_t eccstart=0; //第一个ECC值所属的地址范围
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE0;
//发送地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)ColNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(ColNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)PageNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>8);
NAND_Delay(30);//等待tADL
if(NumByteToWrite%NAND_ECC_SECTOR_SIZE)//不是NAND_ECC_SECTOR_SIZE的整数倍，不进行ECC校验
{
for(i=0;i<NumByteToWrite;i++) //写入数据
{
*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
}
}else
{
eccnum=NumByteToWrite/NAND_ECC_SECTOR_SIZE; //得到ecc计算次数
eccstart=ColNum/NAND_ECC_SECTOR_SIZE;
for(res=0;res<eccnum;res++)
{
FMC_Bank2_3->PCR3|=1<<6; //使能ECC校验
for(i=0;i<NAND_ECC_SECTOR_SIZE;i++) //写入NAND_ECC_SECTOR_SIZE个数据
{
*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
}
while(!(FMC_Bank2_3->SR3&(1<<6))); //等待FIFO空
my_nand.ecc_hdbuf[res+eccstart]=FMC_Bank2_3->ECCR3; //读取硬件计算后的ECC值
FMC_Bank2_3->PCR3&=~(1<<6); //禁止ECC校验
}
i=my_nand.page_mainsize+0X10+eccstart*4; //计算写入ECC的spare区地址
NAND_Delay(30);//等待
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=0X85; //随机写指令
//发送地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)i;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(i>>8);
NAND_Delay(30);//等待tADL
pBuffer=(uint8_t*)&my_nand.ecc_hdbuf[eccstart];
for(i=0;i<eccnum;i++) //写入ECC
{
for(res=0;res<4;res++)
{
*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
}
}
}
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE_TURE1;
if(NAND_WaitForReady()!=NSTA_READY)
{
return NSTA_ERROR;//失败
}
return 0;//成功
}
//在NAND一页中的指定地址开始,写入指定长度的恒定数字
//PageNum:要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
//ColNum:要写入的列开始地址(也就是页内地址),范围:0~(page_totalsize-1)
//cval:要写入的指定常数
//NumByteToWrite:要写入的字数(以4字节为单位)
//返回值:0,成功
// 其他,错误代码
uint8_t NAND_WritePageConst(uint32_t PageNum,uint16_t ColNum,uint32_t cval,uint16_t NumByteToWrite)
{
uint16_t i=0;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE0;
//发送地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)ColNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(ColNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)PageNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(PageNum>>16);
NAND_Delay(30);//等待tADL
for(i=0;i<NumByteToWrite;i++) //写入数据,每次写4字节
{
*(__IO uint32_t*)NAND_ADDRESS=cval;
}
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_WRITE_TURE1;
if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;//失败
return 0;//成功
}
//将一页数据拷贝到另一页,不写入新数据
//注意:源页和目的页要在同一个Plane内！
//Source_PageNo:源页地址,范围:0~(block_pagenum*block_totalnum-1)
//Dest_PageNo:目的页地址,范围:0~(block_pagenum*block_totalnum-1)
//返回值:0,成功
// 其他,错误代码
uint8_t NAND_CopyPageWithoutWrite(uint32_t Source_PageNum,uint32_t Dest_PageNum)
{
uint8_t res=0;
uint16_t source_block=0,dest_block=0;
//判断源页和目的页是否在同一个plane中
source_block=Source_PageNum/my_nand.block_pagenum;
dest_block=Dest_PageNum/my_nand.block_pagenum;
if((source_block%2)!=(dest_block%2))return NSTA_ERROR; //不在同一个plane内
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD0; //发送命令0X00
//发送源页地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)Source_PageNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Source_PageNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Source_PageNum>>16);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD1;//发送命令0X35
//下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
//将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
//就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
//闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
//代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
res=NAND_WaitRB(0); //等待RB=0
if(res)return NSTA_TIMEOUT; //超时退出
//下面2行代码是真正判断NAND是否准备好的
res=NAND_WaitRB(1); //等待RB=1
if(res)return NSTA_TIMEOUT; //超时退出
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD2; //发送命令0X85
//发送目的页地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)Dest_PageNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Dest_PageNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Dest_PageNum>>16);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD3; //发送命令0X10
if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR; //NAND未准备好
return 0;//成功
}
//将一页数据拷贝到另一页,并且可以写入数据
//注意:源页和目的页要在同一个Plane内！
//Source_PageNo:源页地址,范围:0~(block_pagenum*block_totalnum-1)
//Dest_PageNo:目的页地址,范围:0~(block_pagenum*block_totalnum-1)
//ColNo:页内列地址,范围:0~(page_totalsize-1)
//pBuffer:要写入的数据
//NumByteToWrite:要写入的数据个数
//返回值:0,成功
// 其他,错误代码
uint8_t NAND_CopyPageWithWrite(uint32_t Source_PageNum,uint32_t Dest_PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToWrite)
{
uint8_t res=0;
__IO uint16_t i=0;
uint16_t source_block=0,dest_block=0;
uint8_t eccnum=0; //需要计算的ECC个数，每NAND_ECC_SECTOR_SIZE字节计算一个ecc
uint8_t eccstart=0; //第一个ECC值所属的地址范围
//判断源页和目的页是否在同一个plane中
source_block=Source_PageNum/my_nand.block_pagenum;
dest_block=Dest_PageNum/my_nand.block_pagenum;
if((source_block%2)!=(dest_block%2))return NSTA_ERROR;//不在同一个plane内
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD0; //发送命令0X00
//发送源页地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)0;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)Source_PageNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Source_PageNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Source_PageNum>>16);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD1; //发送命令0X35
//下面两行代码是等待R/B引脚变为低电平，其实主要起延时作用的，等待NAND操作R/B引脚。因为我们是通过
//将STM32的NWAIT引脚(NAND的R/B引脚)配置为普通IO，代码中通过读取NWAIT引脚的电平来判断NAND是否准备
//就绪的。这个也就是模拟的方法，所以在速度很快的时候有可能NAND还没来得及操作R/B引脚来表示NAND的忙
//闲状态，结果我们就读取了R/B引脚,这个时候肯定会出错的，事实上确实是会出错!大家也可以将下面两行
//代码换成延时函数,只不过这里我们为了效率所以没有用延时函数。
res=NAND_WaitRB(0); //等待RB=0
if(res)return NSTA_TIMEOUT; //超时退出
//下面2行代码是真正判断NAND是否准备好的
res=NAND_WaitRB(1); //等待RB=1
if(res)return NSTA_TIMEOUT; //超时退出
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD2; //发送命令0X85
//发送目的页地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)ColNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(ColNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)Dest_PageNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Dest_PageNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(Dest_PageNum>>16);
//发送页内列地址
NAND_Delay(30);//等待tADL
if(NumByteToWrite%NAND_ECC_SECTOR_SIZE)//不是NAND_ECC_SECTOR_SIZE的整数倍，不进行ECC校验
{
for(i=0;i<NumByteToWrite;i++) //写入数据
{
*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
}
}else
{
eccnum=NumByteToWrite/NAND_ECC_SECTOR_SIZE; //得到ecc计算次数
eccstart=ColNum/NAND_ECC_SECTOR_SIZE;
for(res=0;res<eccnum;res++)
{
FMC_Bank2_3->PCR3|=1<<6; //使能ECC校验
for(i=0;i<NAND_ECC_SECTOR_SIZE;i++) //写入NAND_ECC_SECTOR_SIZE个数据
{
*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
}
while(!(FMC_Bank2_3->SR3&(1<<6))); //等待FIFO空
my_nand.ecc_hdbuf[res+eccstart]=FMC_Bank2_3->ECCR3; //读取硬件计算后的ECC值
FMC_Bank2_3->PCR3&=~(1<<6); //禁止ECC校验
}
i=my_nand.page_mainsize+0X10+eccstart*4; //计算写入ECC的spare区地址
NAND_Delay(30);//等待
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=0X85; //随机写指令
//发送地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)i;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(i>>8);
NAND_Delay(30);//等待tADL
pBuffer=(uint8_t*)&my_nand.ecc_hdbuf[eccstart];
for(i=0;i<eccnum;i++) //写入ECC
{
for(res=0;res<4;res++)
{
*(__IO uint8_t*)NAND_ADDRESS=*(__IO uint8_t*)pBuffer++;
}
}
}
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_MOVEDATA_CMD3; //发送命令0X10
if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR; //失败
return 0; //成功
}
//读取spare区中的数据
//PageNum:要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
//ColNum:要写入的spare区地址(spare区中哪个地址),范围:0~(page_sparesize-1)
//pBuffer:接收数据缓冲区
//NumByteToRead:要读取的字节数(不大于page_sparesize)
//返回值:0,成功
// 其他,错误代码
uint8_t NAND_ReadSpare(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToRead)
{
uint8_t temp=0;
uint8_t remainbyte=0;
remainbyte=my_nand.page_sparesize-ColNum;
if(NumByteToRead>remainbyte) NumByteToRead=remainbyte; //确保要写入的字节数不大于spare剩余的大小
temp=NAND_ReadPage(PageNum,ColNum+my_nand.page_mainsize,pBuffer,NumByteToRead);//读取数据
return temp;
}
//向spare区中写数据
//PageNum:要写入的页地址,范围:0~(block_pagenum*block_totalnum-1)
//ColNum:要写入的spare区地址(spare区中哪个地址),范围:0~(page_sparesize-1)
//pBuffer:要写入的数据首地址
//NumByteToWrite:要写入的字节数(不大于page_sparesize)
//返回值:0,成功
// 其他,失败
uint8_t NAND_WriteSpare(uint32_t PageNum,uint16_t ColNum,uint8_t *pBuffer,uint16_t NumByteToWrite)
{
uint8_t temp=0;
uint8_t remainbyte=0;
remainbyte=my_nand.page_sparesize-ColNum;
if(NumByteToWrite>remainbyte) NumByteToWrite=remainbyte; //确保要读取的字节数不大于spare剩余的大小
temp=NAND_WritePage(PageNum,ColNum+my_nand.page_mainsize,pBuffer,NumByteToWrite);//读取
return temp;
}
//擦除一个块
//BlockNum:要擦除的BLOCK编号,范围:0-(block_totalnum-1)
//返回值:0,擦除成功
// 其他,擦除失败
uint8_t NAND_EraseBlock(uint32_t BlockNum)
{
if(my_nand.id==MT29F16G08ABABA)BlockNum<<=7; //将块地址转换为页地址
else if(my_nand.id==MT29F4G08ABADA)BlockNum<<=6;
else if(my_nand.id==W29N01HVSINA)BlockNum<<=6;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_ERASE0;
//发送块地址
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)BlockNum;
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(BlockNum>>8);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_ADDR)=(uint8_t)(BlockNum>>16);
*(__IO uint8_t*)(NAND_ADDRESS|NAND_CMD)=NAND_ERASE1;
if(NAND_WaitForReady()!=NSTA_READY)return NSTA_ERROR;//失败
return 0; //成功
}
//全片擦除NAND FLASH
void NAND_EraseChip(void)
{
uint8_t status;
uint16_t i=0;
for(i=0;i<my_nand.block_totalnum;i++) //循环擦除所有的块
{
status=NAND_EraseBlock(i);
if(status)log_i("Erase %d block fail!!，错误码为%d\r\n",i,status);//擦除失败
}
}
//获取ECC的奇数位/偶数位
//oe:0,偶数位
// 1,奇数位
//eccval:输入的ecc值
//返回值:计算后的ecc值(最多16位)
uint16_t NAND_ECC_Get_OE(uint8_t oe,uint32_t eccval)
{
uint8_t i;
uint16_t ecctemp=0;
for(i=0;i<24;i++)
{
if((i%2)==oe)
{
if((eccval>>i)&0X01)ecctemp+=1<<(i>>1);
}
}
return ecctemp;
}
//ECC校正函数
//eccrd:读取出来,原来保存的ECC值
//ecccl:读取数据时,硬件计算的ECC只
//返回值:0,错误已修正
// 其他,ECC错误(有大于2个bit的错误,无法恢复)
uint8_t NAND_ECC_Correction(uint8_t* data_buf,uint32_t eccrd,uint32_t ecccl)
{
uint16_t eccrdo,eccrde,eccclo,ecccle;
uint16_t eccchk=0;
uint16_t errorpos=0;
uint32_t bytepos=0;
eccrdo=NAND_ECC_Get_OE(1,eccrd); //获取eccrd的奇数位
eccrde=NAND_ECC_Get_OE(0,eccrd); //获取eccrd的偶数位
eccclo=NAND_ECC_Get_OE(1,ecccl); //获取ecccl的奇数位
ecccle=NAND_ECC_Get_OE(0,ecccl); //获取ecccl的偶数位
eccchk=eccrdo^eccrde^eccclo^ecccle;
if(eccchk==0XFFF) //全1,说明只有1bit ECC错误
{
errorpos=eccrdo^eccclo;
// log_i("errorpos:%d\r\n",errorpos);
bytepos=errorpos/8;
data_buf[bytepos]^=1<<(errorpos%8);
}else //不是全1,说明至少有2bit ECC错误,无法修复
{
// log_i("2bit ecc error or more\r\n");
return 1;
}
return 0;
}