#ifndef __STMFLASH_H #define __STMFLASH_H #ifdef __cplusplus extern "C" { #endif typedef enum { STM32_F1XX, STM32_F4XX, } STM32_FSeries_TypeDef; typedef enum { STM_FALSH_IGT6, STM_FALSH_ZGT6, STM_FALSH_ZET6, STM_FALSH_VET6, STM_FALSH_RET6, STM_FALSH_RBT6, STM_FALSH_RCT6, STM_FALSH_C8T6, } STM_FALSH_TypeDef; #define STM32_FSeries_TYPE STM32_F4XX #define STM_FALSH_TYPE STM_FALSH_ZGT6 #include "main.h" //FLASH起始地址 #define STM32_FLASH_BASE 0x08000000 //STM32 FLASH的起始地址 #define FLASH_WAITETIME 50000 //FLASH等待超时时间 #if STM_FALSH_TYPE == STM_FALSH_ZGT6 || STM_FALSH_TYPE == STM_FALSH_IGT6 || STM_FALSH_TYPE == STM_FALSH_ZET6 #define STM32_FLASH_SIZE 0x00100000 //STM32 FLASH的起始地址 1M #define STM32_PAGE_SIZE 0x00000800 //STM32 页大小 2K #define STM32_LAST_SECTOR_ADDR 0x080E0000 //STM32 页大小 2K #define STM32_LAST_SECTOR_SIZE 0x00020000 //STM32 页大小 128K #endif //FLASH 扇区的起始地址 #define ADDR_FLASH_SECTOR_0 ((uint32_t)0x08000000) //扇区0起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_1 ((uint32_t)0x08004000) //扇区1起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_2 ((uint32_t)0x08008000) //扇区2起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_3 ((uint32_t)0x0800C000) //扇区3起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_4 ((uint32_t)0x08010000) //扇区4起始地址, 64 Kbytes #define ADDR_FLASH_SECTOR_5 ((uint32_t)0x08020000) //扇区5起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_6 ((uint32_t)0x08040000) //扇区6起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_7 ((uint32_t)0x08060000) //扇区7起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_8 ((uint32_t)0x08080000) //扇区8起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_9 ((uint32_t)0x080A0000) //扇区9起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_10 ((uint32_t)0x080C0000) //扇区10起始地址,128 Kbytes #define ADDR_FLASH_SECTOR_11 ((uint32_t)0x080E0000) //扇区11起始地址,128 Kbytes uint32_t STMFLASH_ReadWord(uint32_t faddr); //读出字 void STMFLASH_Write(uint32_t WriteAddr,uint32_t *pBuffer,uint32_t NumToWrite); //从指定地址开始写入指定长度的数据 void STMFLASH_Read(uint32_t ReadAddr,uint32_t *pBuffer,uint32_t NumToRead); //从指定地址开始读出指定长度的数据 int STMFLASH_ErasePage(uint32_t Page_Address); //从指定地址开始擦除页 //测试写入 void Test_Write(uint32_t WriteAddr,uint32_t WriteData); #ifdef __cplusplus } #endif #endif /* F103 可以用页擦除， 以页为单位操作。 F407以扇区为单位操作 擦除页函数 FLASH_ErasePage(uint32_t Page_Address); // F407无此函数 擦除扇区函数 HAL_FLASHEx_Erase(&FlashEraseInit,&SectorError) 擦除操作，以扇区为单位，不是以扇区为单位 写入， 至少16bit, 8bit 写入也是占2个位置，32bit = 2*16bit, 以半字为单位 STM32F407ZET6 内部Flash分区 512K #define ADDR_FLASH_SECTOR_0 ((uint32_t)0x08000000) //扇区0起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_1 ((uint32_t)0x08004000) //扇区1起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_2 ((uint32_t)0x08008000) //扇区2起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_3 ((uint32_t)0x0800C000) //扇区3起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_4 ((uint32_t)0x08010000) //扇区4起始地址, 64 Kbytes #define ADDR_FLASH_SECTOR_5 ((uint32_t)0x08020000) //扇区5起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_6 ((uint32_t)0x08040000) //扇区6起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_7 ((uint32_t)0x08060000) //扇区7起始地址, 128 Kbytes STM32F407ZGT6 内部Flash分区 1M #define ADDR_FLASH_SECTOR_0 ((uint32_t)0x08000000) //扇区0起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_1 ((uint32_t)0x08004000) //扇区1起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_2 ((uint32_t)0x08008000) //扇区2起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_3 ((uint32_t)0x0800C000) //扇区3起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_4 ((uint32_t)0x08010000) //扇区4起始地址, 64 Kbytes #define ADDR_FLASH_SECTOR_5 ((uint32_t)0x08020000) //扇区5起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_6 ((uint32_t)0x08040000) //扇区6起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_7 ((uint32_t)0x08060000) //扇区7起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_8 ((uint32_t)0x08080000) //扇区8起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_9 ((uint32_t)0x080A0000) //扇区9起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_10 ((uint32_t)0x080C0000) //扇区10起始地址,128 Kbytes #define ADDR_FLASH_SECTOR_11 ((uint32_t)0x080E0000) //扇区11起始地址,128 Kbytes STM32F429IGT6 内部Flash分区 -- 同上 STM32F103C8T6 内部Flash分区 64K， 64*1024Bytes 单个扇区 1K， 0x400 64K (F103C8T6 ) --->>>> 单个扇区 1K 0x400 最后一个扇区地址：0x0800FC00 128K (F103RCT6) --->>>> 单个扇区 1K 0x400 ，最后一个扇区地址：0x0801FC00 256K (F103RBT6) --->>> 单个扇区 2K 0x800 ，最后一个扇区地址：0x0803F800 512K (F103RET6), --->>> 单个扇区 2K 0x800 ，最后一个扇区地址：0x0807F800 512K (F103ZET6), --->>> 单个扇区 2K 0x800 ，最后一个扇区地址：0x0807F800 STM32F103VET 6 内部Flash分区 512K #define ADDR_FLASH_SECTOR_0 ((uint32_t)0x08000000) //扇区0起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_1 ((uint32_t)0x08004000) //扇区1起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_2 ((uint32_t)0x08008000) //扇区2起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_3 ((uint32_t)0x0800C000) //扇区3起始地址, 16 Kbytes #define ADDR_FLASH_SECTOR_4 ((uint32_t)0x08010000) //扇区4起始地址, 64 Kbytes #define ADDR_FLASH_SECTOR_5 ((uint32_t)0x08020000) //扇区5起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_6 ((uint32_t)0x08040000) //扇区6起始地址, 128 Kbytes #define ADDR_FLASH_SECTOR_7 ((uint32_t)0x08060000) //扇区7起始地址, 128 Kbytes STM32F103ZET6 内部Flash分区 512K 每页2K -->> 调用擦除页函数 FLASH_ErasePage(uint32_t Page_Address); */