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178 lines
6.8 KiB
178 lines
6.8 KiB
#include "stmflash.h"
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//读取指定地址的字(32位数据)
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//faddr:读地址
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//返回值:对应数据.
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uint32_t STMFLASH_ReadWord(uint32_t faddr)
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{
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return *(volatile uint32_t*)faddr;
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}
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//获取某个地址所在的flash扇区
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//addr:flash地址
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//返回值:0~11,即addr所在的扇区
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uint8_t STMFLASH_GetFlashSector(uint32_t addr)
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{
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if(addr<ADDR_FLASH_SECTOR_1)return FLASH_SECTOR_0;
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else if(addr<ADDR_FLASH_SECTOR_2)return FLASH_SECTOR_1;
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else if(addr<ADDR_FLASH_SECTOR_3)return FLASH_SECTOR_2;
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else if(addr<ADDR_FLASH_SECTOR_4)return FLASH_SECTOR_3;
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else if(addr<ADDR_FLASH_SECTOR_5)return FLASH_SECTOR_4;
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else if(addr<ADDR_FLASH_SECTOR_6)return FLASH_SECTOR_5;
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else if(addr<ADDR_FLASH_SECTOR_7)return FLASH_SECTOR_6;
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else if(addr<ADDR_FLASH_SECTOR_8)return FLASH_SECTOR_7;
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else if(addr<ADDR_FLASH_SECTOR_9)return FLASH_SECTOR_8;
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else if(addr<ADDR_FLASH_SECTOR_10)return FLASH_SECTOR_9;
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else if(addr<ADDR_FLASH_SECTOR_11)return FLASH_SECTOR_10;
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return FLASH_SECTOR_11;
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}
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//从指定地址开始写入指定长度的数据
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//特别注意:因为STM32F4的扇区实在太大,没办法本地保存扇区数据,所以本函数
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// 写地址如果非0XFF,那么会先擦除整个扇区且不保存扇区数据.所以
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// 写非0XFF的地址,将导致整个扇区数据丢失.建议写之前确保扇区里
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// 没有重要数据,最好是整个扇区先擦除了,然后慢慢往后写.
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//该函数对OTP区域也有效!可以用来写OTP区!
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//OTP区域地址范围:0X1FFF7800~0X1FFF7A0F(注意：最后16字节，用于OTP数据块锁定，别乱写！！)
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//WriteAddr:起始地址(此地址必须为4的倍数!!)
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//pBuffer:数据指针
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//NumToWrite:字(32位)数(就是要写入的32位数据的个数.)
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#if STM32_FSeries_TYPE == STM32_F4XX
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void STMFLASH_Write(uint32_t WriteAddr,uint32_t *pBuffer,uint32_t NumToWrite)
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{
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FLASH_EraseInitTypeDef FlashEraseInit;
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HAL_StatusTypeDef FlashStatus=HAL_OK;
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uint32_t SectorError=0;
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uint32_t addrx=0;
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uint32_t endaddr=0;
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if(WriteAddr<STM32_FLASH_BASE||WriteAddr%4)return; //非法地址
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HAL_FLASH_Unlock(); //解锁
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addrx=WriteAddr; //写入的起始地址
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endaddr=WriteAddr+NumToWrite*4; //写入的结束地址
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if(addrx<0X1FFF0000)
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{
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while(addrx<endaddr) //扫清一切障碍.(对非FFFFFFFF的地方,先擦除)
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{
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if(STMFLASH_ReadWord(addrx)!=0XFFFFFFFF)//有非0XFFFFFFFF的地方,要擦除这个扇区
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{
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FlashEraseInit.TypeErase=FLASH_TYPEERASE_SECTORS; //擦除类型，扇区擦除
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FlashEraseInit.Sector=STMFLASH_GetFlashSector(addrx); //要擦除的扇区
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FlashEraseInit.NbSectors=1; //一次只擦除一个扇区
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FlashEraseInit.VoltageRange=FLASH_VOLTAGE_RANGE_3; //电压范围，VCC=2.7~3.6V之间!!
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if(HAL_FLASHEx_Erase(&FlashEraseInit,&SectorError)!=HAL_OK)
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{
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break;//发生错误了
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}
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}else addrx+=4;
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FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
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}
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}
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FlashStatus=FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
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if(FlashStatus==HAL_OK)
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{
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while(WriteAddr<endaddr)//写数据
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{
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if(HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD,WriteAddr,*pBuffer)!=HAL_OK)//写入数据
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{
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break; //写入异常
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}
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WriteAddr+=4;
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pBuffer++;
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}
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}
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HAL_FLASH_Lock(); //上锁
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}
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#endif
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// #if STM32_FSeries_TYPE == STM32_F1XX // 103 系列的写，擦除页
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// #if STM32_FLASH_SIZE<256
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// #define STM_SECTOR_SIZE 1024 //字节
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// #else
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// #define STM_SECTOR_SIZE 2048
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// #endif
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// uint16_t STMFLASH_BUF[STM_SECTOR_SIZE/2];//最多是2K字节
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// void STMFLASH_Write(uint32_t WriteAddr,uint16_t *pBuffer,uint16_t NumToWrite)
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// {
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// uint32_t secpos; //扇区地址
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// uint16_t secoff; //扇区内偏移地址(16位字计算)
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// uint16_t secremain; //扇区内剩余地址(16位字计算)
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// uint16_t i;
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// uint32_t offaddr; //去掉0X08000000后的地址
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// if(WriteAddr<STM32_FLASH_BASE||(WriteAddr>=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)))return;//非法地址
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// HAL_FLASH_Unlock(); //解锁
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// offaddr=WriteAddr-STM32_FLASH_BASE; //实际偏移地址.
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// secpos=offaddr/STM_SECTOR_SIZE; //扇区地址 0~127 for STM32F103RBT6
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// secoff=(offaddr%STM_SECTOR_SIZE)/2; //在扇区内的偏移(2个字节为基本单位.)
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// secremain=STM_SECTOR_SIZE/2-secoff; //扇区剩余空间大小
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// if(NumToWrite<=secremain)secremain=NumToWrite;//不大于该扇区范围
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// while(1)
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// {
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// STMFLASH_Read(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//读出整个扇区的内容
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// for(i=0;i<secremain;i++) //校验数据
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// {
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// if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;//需要擦除
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// }
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// if(i<secremain) //需要擦除
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// {
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// FLASH_PageErase(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE); //擦除这个扇区
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// FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
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// CLEAR_BIT(FLASH->CR, FLASH_CR_PER); //清除CR寄存器的PER位，此操作应该在FLASH_PageErase()中完成！
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// //但是HAL库里面并没有做，应该是HAL库bug！
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// for(i=0;i<secremain;i++)//复制
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// {
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// STMFLASH_BUF[i+secoff]=pBuffer[i];
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// }
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// STMFLASH_Write_NoCheck(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//写入整个扇区
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// }else
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// {
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// FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
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// STMFLASH_Write_NoCheck(WriteAddr,pBuffer,secremain);//写已经擦除了的,直接写入扇区剩余区间.
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// }
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// if(NumToWrite==secremain)break;//写入结束了
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// else//写入未结束
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// {
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// secpos++; //扇区地址增1
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// secoff=0; //偏移位置为0
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// pBuffer+=secremain; //指针偏移
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// WriteAddr+=secremain*2; //写地址偏移(16位数据地址,需要*2)
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// NumToWrite-=secremain; //字节(16位)数递减
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// if(NumToWrite>(STM_SECTOR_SIZE/2))secremain=STM_SECTOR_SIZE/2;//下一个扇区还是写不完
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// else secremain=NumToWrite;//下一个扇区可以写完了
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// }
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// };
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// HAL_FLASH_Lock(); //上锁
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// }
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// #endif
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//从指定地址开始读出指定长度的数据
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//ReadAddr:起始地址
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//pBuffer:数据指针
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//NumToRead:字(32位)数
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void STMFLASH_Read(uint32_t ReadAddr,uint32_t *pBuffer,uint32_t NumToRead)
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{
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uint32_t i;
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for(i=0;i<NumToRead;i++)
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{
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pBuffer[i]=STMFLASH_ReadWord(ReadAddr);//读取4个字节.
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ReadAddr+=4;//偏移4个字节.
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}
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}
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int STMFLASH_ErasePage(uint32_t Page_Address)
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{
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return FLASH_ErasePage( Page_Address);
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}
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//////////////////////////////////////////测试用///////////////////////////////////////////
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//WriteAddr:起始地址
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//WriteData:要写入的数据
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void Test_Write(uint32_t WriteAddr,uint32_t WriteData)
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{
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STMFLASH_Write(WriteAddr,&WriteData,1);//写入一个字
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}
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